GU 2 Form B (AQW414)
4. Reverse (ON) time vs. ambient temperature
characteristics
LED current: 5 mA; Load voltage: 400 V (DC);
Continuous load current: 100 mA (DC)
1.2
1.0
0.8
0.6
0.4
0.2
5. LED operate (OFF) current vs. ambient
temperature characteristics
Load voltage: 400 V (DC);
Continuous load current: 100 mA (DC)
5
4
3
2
1
6. LED reverse (ON) current vs. ambient
temperature characteristics
Load voltage: 400 V (DC);
Continuous load current: 100 mA (DC)
5
4
3
2
1
0
–40
–20
0
20 40 60 8085
0
–40
–20
0
20
40
60
8085
0
–40
–20
0
20 40 60 8085
Ambient temperature, ° C
7. LED dropout voltage vs. ambient
temperature characteristics
LED current: 5 to 50 mA
1.5
1.4
Ambient temperature, ° C
8. Current vs. voltage characteristics of output
at MOS portion
Measured portion: between terminals 5 and 6, 7 and 8;
Ambient temperature: 25 ° C 77 ° F
120
100
80
Ambient temperature, ° C
9. Off state leakage current vs. load voltage
characteristics
Measured portion: between terminals 5 and 6, 7 and 8;
Ambient temperature: 25 ° C 77 ° F
10 –3
1.2
50mA
30mA
1.3 20mA
10mA
5mA
1.1
60
40
20
–6 –5 –4 –3 –2 –1
1
–20
–40
2 3 4 5 6
Voltage, V
10 –6
10 –9
–60
1.0
–80
–100
10 –12
0
–40 –20
0 20 40 60 8085 100
Ambient temperature, ° C
–120
0
20
40 60 80
Load voltage, V
100
10. Operate (OFF) time vs. LED forward
current characteristics
Measured portion: between terminals 5 and 6, 7 and 8;
Load voltage: 400 V (DC);
Continuous load current: 100 mA (DC);
Ambient temperature: 25 ° C 77 ° F
3.0
2.5
2.0
1.5
1.0
0.5
11. Reverse (ON) time vs. LED forward current
characteristics
Measured portion: between terminals 5 and 6, 7 and 8;
Load voltage: 400 V (DC);
Continuous load current: 100 mA (DC);
Ambient temperature: 25 ° C 77 ° F
1.2
1.0
0.8
0.6
0.4
0.2
12. Output capacitance vs. applied voltage
characteristics
Measured portion: between terminals 5 and 6, 7 and 8;
Frequency: 1 MHz;
Ambient temperature: 25 ° C 77 ° F
120
100
80
60
40
20
0
10
20 30 40 50
60
0
10
20 30 40 50
60
0
0
10
20
30
40
50
60
LED forward current, mA
LED forward current, mA
Applied voltage, V
Panasonic Corporation
Automation Controls Business Unit
industrial.panasonic.com/ac/e
ASCTB51E 201201-T
相关PDF资料
AQW454AZ RELAY OPTO AC/DC 400V 120MA 8SMD
AQW612S RELAY OPTO 60V 0.45A SOP8
AQW614EHAZ RELAY OPTO DPST-NO/NC 100MA 8SMD
AQW614 RELAY OPTO AC/DC 400V 100MA 8DIP
AQW654A RELAY OPTO AC/DC 400V 120MA 8SMD
AQY210HL RELAY OPTO SPST-NO 120MA 4 DIP
AQY210KS RELAY OPTO SPST-NO 120MA 4-SOP
AQY210LSZ RELAY OPTO SPST 120MA 4 SOP T/R
相关代理商/技术参数
AQW414E 功能描述:固态继电器-PCB安装 RELAY OPTO DPST-NC 100MA 8 DIP RoHS:否 制造商:Omron Electronics 控制电压范围: 负载电压额定值:40 V 负载电流额定值:120 mA 触点形式:1 Form A (SPST-NO) 输出设备:MOSFET 封装 / 箱体:USOP-4 安装风格:SMD/SMT
AQW414EA 功能描述:固态继电器-PCB安装 RELAY OPTO DPST-NC 100MA 8SMD RoHS:否 制造商:Omron Electronics 控制电压范围: 负载电压额定值:40 V 负载电流额定值:120 mA 触点形式:1 Form A (SPST-NO) 输出设备:MOSFET 封装 / 箱体:USOP-4 安装风格:SMD/SMT
AQW414EAJ 制造商:Panasonic Electric Works 功能描述:
AQW414EAX 功能描述:固态继电器-PCB安装 RELAY OPTO DPST-NC 100MA 8SMD RoHS:否 制造商:Omron Electronics 控制电压范围: 负载电压额定值:40 V 负载电流额定值:120 mA 触点形式:1 Form A (SPST-NO) 输出设备:MOSFET 封装 / 箱体:USOP-4 安装风格:SMD/SMT
AQW414EAZ 功能描述:固态继电器-PCB安装 RELAY OPTO DPST-NC 100MA 8SMD RoHS:否 制造商:Omron Electronics 控制电压范围: 负载电压额定值:40 V 负载电流额定值:120 mA 触点形式:1 Form A (SPST-NO) 输出设备:MOSFET 封装 / 箱体:USOP-4 安装风格:SMD/SMT
AQW414EH 功能描述:固态继电器-PCB安装 100MA 400V 8PIN DPST-NC RoHS:否 制造商:Omron Electronics 控制电压范围: 负载电压额定值:40 V 负载电流额定值:120 mA 触点形式:1 Form A (SPST-NO) 输出设备:MOSFET 封装 / 箱体:USOP-4 安装风格:SMD/SMT
AQW414EHA 功能描述:固态继电器-PCB安装 100MA 400V DPST-NC RoHS:否 制造商:Omron Electronics 控制电压范围: 负载电压额定值:40 V 负载电流额定值:120 mA 触点形式:1 Form A (SPST-NO) 输出设备:MOSFET 封装 / 箱体:USOP-4 安装风格:SMD/SMT
AQW414EHAJ 制造商:Panasonic Electric Works 功能描述: